Scandium-doped AlN for MEMS

The goal of this project is to design, fabricate and characterize novel MEMS devices based on scandium-doped AlN thin films. Scandium-doped AlN thin film is a promising piezoelectric material due to its CMOS compatible process, low relative permittivity and high piezoelectric coefficient. It enables better performance for piezoelectric MEMS devices.

Researchers

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