Integrated Microgyroscopes with Improved Scale-Factor and Bias Stability

Despite their small size, low power dissipation, and low cost, the large bias and scale factor errors of current MEMS inertial sensors preclude using them for dead reckoning navigation. Although these shortcomings can be overcome with precision manufacturing and extensive calibration, such solutions suffer from high cost and secondary effects such as long term drift. Presently, the use of in-situ calibration techniques in MEMS sensors is limited to the electronic interfaces, where they are instrumental for reducing drift arising from electronic components. This project extends the benefit of electronic background calibration to the MEMS transducer to continuously reduce scale factor and bias errors arising from manufacturing tolerances and drift in MEMS gyros.

Researchers

Publications

  • Nitzan, S.; Su, T.-H.; Ahn, C.; Ng, E.; Hong, V.; Yang, Y.; Kenny, T.; Horsley, D.A, “Impact of gyroscope operation above the critical bifurcation threshold on scale factor and bias instability,” Micro Electro Mechanical Systems (MEMS), 2014 IEEE 27th International Conference on , vol., no., pp.749,752, 26-30 Jan. 2014
    doi: 10.1109/MEMSYS.2014.6765749
  • Su, Tsang-Hung; Nitzan, S.H.; Taheri-Tehrani, P.; Kline, M.H.; Boser, B.E.; Horsley, D.A, “Silicon MEMS Disk Resonator Gyroscope with an Integrated CMOS Analog Front-End,” Sensors Journal, IEEE , vol.PP, no.99, pp.1,1
    doi: 10.1109/JSEN.2014.2335735
  • Su, T.-H.; Nitzan, S.; Taheri-Tehrani, P.; Kline, M.; Boser, B.; Horsley, D.A, “MEMS disk resonator gyroscope with integrated analog front-end,” SENSORS, 2013 IEEE , vol., no., pp.1,4, 3-6 Nov. 2013
    doi: 10.1109/ICSENS.2013.6688164
  • Nitzan, S.; Ahn, C.H.; Su, T.-H.; Li, M.; Ng, E.J.; Wang, S.; Yang, Z.M.; O’Brien, G.; Boser, B.E.; Kenny, T.W.; Horsley, D.A, “Epitaxially-encapsulated polysilicon disk resonator gyroscope,” Micro Electro Mechanical Systems (MEMS), 2013 IEEE 26th International Conference on , vol., no., pp.625,628, 20-24 Jan. 2013
    doi: 10.1109/MEMSYS.2013.6474319

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